![]() ![]() Some current enters the base, and leaves the emitter, through some voltage \$V_^2/4R_4 = 100mW,$$ larger than, but not so far from, Olin Lathrop's bound. Since a BJT is a three-terminal device, each of which may have a different current and voltage, for the purposes of power calculation it helps to consider the transistor as two parts. It doesn't matter if you want to calculate the power in a resistor, transistor, circuit, or waffle, power is still the product of voltage and current. Usually we are converting electrical energy into heat, and we care about power because we don't want to melt our components. Electrical power is the product of voltage and current: It is important to understand the way BJTs and MOSFETs function in order to use either of them as per the exact requirements.Power is the rate at which energy is being converted into some other energy. However, as we have highlighted in the above table, they are different from each other in many aspects. It is used in power supplies, etc.īJT and MOSFET are types of semiconductor transistors with a wide range of applications. MOSFET is suitable for high power applications. The power dissipated by the transistor will be the product of those two. Since the small amount of current going into the base is irrelevant in power dissipation, calculate the C-E voltage and the collector current. ![]() It is widely used as amplifiers, oscillators and electronic switches. Power is the voltage across something times the current going through it. The power consumed by a MOSFET is less than BJTīJT is preferred for the low current applications. MOSFET has positive temperature coefficient.įor MOSFET, the switching frequency is relatively high. ![]() MOSFET has relatively high input impedance.īJT has negative temperature coefficient. In MOSFET, either electrons or holes act as charge carriers depending on the type of channel between source and drain. In BJT, both electrons and holes act as charge carriers. MOSFET has four terminals, i.e., source, drain, gate and body (or substrate). MOSFET is a four-terminal semiconductor device which is used for switching applications.īased on the construction, BJTs are classified into two types: NPN and PNP.īased on the construction and operation, the MOSFETs are classified into four types: P-channel enhancement MOSFET, N-channel enhancement MOSFET, P-channel depletion MOSFET and N-channel depletion MOSFET.īJT has three terminals viz. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor.īJT is a three-terminal semiconductor device used for switching and amplification of signals. ParameterīJT stands for Bipolar Junction Transistor. The following table highlights the major differences between bipolar junction transistor and metal oxide semiconductor field effect transistor. While the depletion MOSFET remains ON under normal conditions and it requires a gate voltage to turn it OFF. −Īn enhancement type MOSFET remains OFF under normal conditions and needs a gate voltage to turn it ON. MOSFETs are high speed and low-loss operation transistors.Īccording to the principle of operation, the MOSFETs are of two types viz. MOSFET is a field effect transistor with a MOS structure. It is a four-terminal semiconductor device where the terminals are: source (S), drain (D), gate (G), and body (or substrate). MOSFET stands for metal oxide semiconductor field effect transistor. When N-type layer is sandwiched between two P-type layers, the resulting BJT is known as PNP transistor. When P-type semiconductor material is sandwiched between two N-type layers, the bipolar junction transistor is known as NPN transistor. emitter (E), base (B), and collector (C). A BJT consists of three alternating layers of P-type and N-type semiconductor materials and two P-N junctions. It is a type of transistor in which the current flow is due to two types of charge carriers viz. Read through this article to find out more about BJTs and MOSFETs and how they differ from each other.īJT stands for Bipolar Junction Transistor. MOSFETs, on the other hand, are four-terminal semiconductor devices used for switching applications. ![]() BJTs are three-terminal semiconductor devices used for switching and amplification of signals. ![]()
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